Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• : aluminium zinc oxide; magnetron sputtering; thin film; transparent conducting oxide; transparent electronics; Introduction Aluminium-doped zinc oxide (AZO) is a potential alternative to indium tin oxide (ITO) for transparent conducting oxide (TCO) electrodes in transparent electronic and photovoltaic

• TCO thin films for the purpose of transparent electronics is the transparency in the visible part of the optical spectrum. Figure 5a shows the light transmission (T) characteristics of the prepared thin films measured in the spectral range from 300 to 1000 nm as a function of the distance from the

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• transparent electronics [11][12][13]. To exploit these beneficial properties, in electronics large area deposition of MoS2 films with precisely controlled layer numbers with high crystalline quality and a low defect density is typically desired. Beyond electronic device applications, MoS2 is also a promising